〇Yoshiki Ono¹, Nanae Atsumi², Shogo Itoh², Yushin Numazawa², Yalei Huang³, Hirokazu Tatsuoka², Naohisa Takahashi⁴ (1.Fac. Eng. , Shizuoka Univ., 2.Grad. Sch. Integr. Sci. & Technol. , Shizuoka Univ., 3.Grad. Sch. Sci. & Technol. , Shizuoka Univ., 4.Yamaha Central Research Lab.)

9:30 AM - 11:30 AM

Mg treatment of CaSi₂

〇(M1C)Yushin Numazawa¹, Weng Mingwei², Shogo Itoh², Nanae Atsumi¹, Yoshiki Ono², Yalei Huang³, Hirokazu Tatsuoka¹, Naohisa Takahashi⁴ (1.Grad. Sch. Integr. Sci. & Tech., Shizuoka Univ., 2..Fac. Eng.,Shizuoka Univ, 3.Grad. Sch. Sci. & Tech., Shizuoka Univ., 4.Yamaha Advanced Material Research Gr.)

9:30 AM - 11:30 AM

[10a-PB2-7] Synthesis of Si nanowire/nanosheet complex by MnCl₂/NH₄Cl treatment of CaSi₂

〇Shogo Ito¹, Numazawa Yushin², Weng Mingwei¹, Atsumi Nanae², Ono Yoshiki¹, Huang yalei³, Tatsuoka Hirokazu², Takahashi Naohisa⁴ (1.Fac. Eng., Shizuoka Univ., 2.Grad. Sch. Integr. Sci. & Technol., Shizuoka Univ., 3.Grad. Sch. Sci. & Technol., Shizuoka Univ., 4.Yamaha Advanced Material Research Gr.)

9:30 AM - 11:30 AM

[10a-PB2-8] Influence of BaSi₂ template layer fabrication methods on the performance of p-BaSi₂/n-Si hetero junction solar cells

〇Ryota Sugiyama¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

9:30 AM - 11:30 AM

[10a-PB2-9] Influence of annealing condition on carrier density of BaSi₂ film

〇Yuki Kimura¹, Michinobu Fujiwara¹, Yoshihiko Nakagawa¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ.)

9:30 AM - 11:30 AM

▲ [10a-PB2-10] Study of the origin of defect levels in undoped-BaSi2 epitaxial films by PL measurement

〇Louise Benincasa^1,2, Hirofumi Hoshida³, Tianguo Deng¹, Takuma Sato^1,2, Kaoru Toko¹, Yoshikazu Terai³, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Univ. Grenoble Aples, 3.Kyushu Inst. Tech.)

9:30 AM - 11:30 AM

[10a-PB2-11] Optimization of donor activation conditions in Sb-doped β-FeSi₂ epitaxial films (II)

〇(M2)Hajime Eguchi¹, Mitsuki Abe¹, Ryota Kinoshita¹, Tomoki Murakami¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

9:30 AM - 11:30 AM

[10a-PB2-12] Dependence of active layer thickness on 1.5 μm PL properties in Si/B-doped β-FeSi₂/Si stacked structures

〇(M2)Naohiro Oka¹, Ryuji Satou¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

9:30 AM - 11:30 AM

△ [10a-PB2-13] Time resolution photothermal divergences signal of the exciting light dependence on SiC surface

〇Shintaro Harada¹, Shinya Takeichi¹, Shun Kamada², Weiwei Xu¹, Takanori Kozai¹, Takeshi Fujihara¹, Tao Zheng¹, Tomoya Konishi¹, Masaru Kamano¹ (1.NIT Anan College, 2.Tokushima Univ.)

9:30 AM - 11:30 AM

[10a-PB2-14] Synthesis and Characterization of Type II SiGe clathrate

Hirotaka Hisamatsu¹, Kunihiko Yamada², Himanshu S. Jha¹, Fumitaka Ohashi^1,2, 〇Tetsuji Kume^1,2 (1.Gifu Univ. Eng., 2.Gifu Univ. NST)

9:30 AM - 11:30 AM

[10a-PB2-15] Electronic structure of interstitial hydrogen in bulk single-crystalline InGaZnO₄

〇Masatoshi Hiraishi¹, Kenji Kojima², Hirotaka Okabe¹, Akihiro Koda^1,3, Ryosuke Kadono^1,3, Yuki Kobayashi⁴, Nobuaki Miyakawa⁴ (1.KEK-IMSS, 2.TRIUMF, 3.Sokendai, 4.Tokyo. Univ. Sci.)

9:30 AM - 11:30 AM

[10a-PB2-16] Investigation of group 2 element containing ternary phosphide semiconductors

〇(PC)Ryoji Katsube¹, Kou Harada², Fumiyasu Oba², Yoshitaro Nose¹ (1.Kyoto Univ., 2.IIR-MSL Tokyo Tech.)

9:30 AM - 11:30 AM

[10a-PB2-17] Formation and magneto-optical characterization of GaN/GdN superlattices (Ⅰ)
- effect of growth procedure in GdN wells -

〇Akifumi Okamoto¹, Hasegawa Shigehiko¹ (1.Osaka Univ.)

9:30 AM - 11:30 AM

[10a-PB2-18] Fabrication of high quality iron oxide thin film on Si substrate using buffer layer

〇Kenta Yamanaka^1,2, Kengo Takano^1,2, Kenji Yamaguchi² (1.Ibaraki Univ., 2.QST)

Session information

[10a-PB2-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

[10a-PB2-1] Measurement of carrier concentration in n-type Mg2Si crystals by C-V method

[10a-PB2-2] Reducing residual carrier density in Mg₂Si crystal by in-situ annealing

[10a-PB2-3] Observation of crystal defects in Mg₂Si melt grown crystals by wet-etching

[10a-PB2-4] Fluorination treatment of CaSi₂ thin films grown on Si(111)

[10a-PB2-5] Synthesis of CaF₂ nanoparticles by HF treatment of Calcium silicides

[10a-PB2-6] Synthesis of Mg₂Si/Si nanocomposites by MgCl₂/Mg treatment of CaSi₂

[10a-PB2-7] Synthesis of Si nanowire/nanosheet complex by MnCl₂/NH₄Cl treatment of CaSi₂

[10a-PB2-8] Influence of BaSi₂ template layer fabrication methods on the performance of p-BaSi₂/n-Si hetero junction solar cells

[10a-PB2-9] Influence of annealing condition on carrier density of BaSi₂ film

▲ [10a-PB2-10] Study of the origin of defect levels in undoped-BaSi2 epitaxial films by PL measurement

[10a-PB2-11] Optimization of donor activation conditions in Sb-doped β-FeSi₂ epitaxial films (II)

[10a-PB2-12] Dependence of active layer thickness on 1.5 μm PL properties in Si/B-doped β-FeSi₂/Si stacked structures

△ [10a-PB2-13] Time resolution photothermal divergences signal of the exciting light dependence on SiC surface

[10a-PB2-14] Synthesis and Characterization of Type II SiGe clathrate

[10a-PB2-15] Electronic structure of interstitial hydrogen in bulk single-crystalline InGaZnO₄

[10a-PB2-16] Investigation of group 2 element containing ternary phosphide semiconductors

[10a-PB2-17] Formation and magneto-optical characterization of GaN/GdN superlattices (Ⅰ)
- effect of growth procedure in GdN wells -

[10a-PB2-18] Fabrication of high quality iron oxide thin film on Si substrate using buffer layer

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