Muhammad Ajmal Khan

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Speaker, Author, Co-Author

Sun. Mar 10, 2019 1:30 PM - 7:00 PM W541 (W541)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[10p-W541-1~20] 15.4 III-V-group nitride crystals

4:30 PM - 4:45 PM

▲ [10p-W541-12] Effect of 4μm-thick Buffer as well as 50% relaxed n-AlGaN Electron Injection Layer on the Performance of 308nm UV-B LED

〇Muhammad Ajmal Khan¹, Noritoshi Maeda¹, Masafumi Jo¹, Yoichi Yamada², Hideki Hirayama¹ (1.RIKEN Center for Advanced Photonics (RAP), 2-1, Hirosawa, Wako, Saitama 351-0198, Japan, 2.Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi, 755-8611, Japan)

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