Makoto Kasu

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Speaker, Author, Co-Author

Tue. Mar 12, 2019 9:00 AM - 11:30 AM M121 (H121)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[12a-M121-1~9] 13.7 Compound and power electron devices and process technology

10:45 AM - 11:00 AM

[12a-M121-7] Small-signal RF characteristics for submicron-gate MOSFETs fabricated on hetero-epitaxial diamond substrate

Yuma Ishimatsu¹, Toshiyuki Oishi¹, Takuya Kamogawa¹, Saha Niloy Chandra¹, Seong-Woo Kim², 〇Makoto Kasu¹ (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

Sat. Mar 9, 2019 1:45 PM - 5:15 PM S011 (South Lecture Bldg.)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-S011-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:45 PM - 5:00 PM

[9p-S011-12] Relation between emission spots and reverse leakage current in HVPE (001) β-Ga₂O₃Schottky barrier diodes

〇Makoto Kasu¹, Eitetsu Katagiri¹, Kohei Sasaki², Katsumi Kawasaki³, Jun Hirabayashi³, Shigenobu Yamakoshi⁴, Akito Kuramata² (1.Saga Univ., 2.Novel Crystal Tech., 3.TDK Corp., 4.Tamura Corp.)

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