Tetsuya Yamamoto

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Speaker, Author, Co-Author

Sun. Mar 10, 2019 1:30 PM - 5:15 PM W241 (W241)

Symposium (Oral)
| Symposium
| Pioneering of Frontier technology for metal oxide novel device I -from thin film fabrication to device creation -

[10p-W241-1~8] Pioneering of Frontier technology for metal oxide novel device I -from thin film fabrication to device creation -

3:00 PM - 3:15 PM

[10p-W241-4] Factors limiting growth rates and carrier concentrations of Ga-doped ZnO films deposited by reactive plasma deposition with dc arc discharge

〇Tetsuya Yamamoto¹, Yutaka Furubayashi¹, Hisao Makino¹ (1.Kochi Univ. Tech.)