Takashi Tsukasaki

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 9:30 AM - 12:15 PM S422 (S422)

Oral presentation
| 15 Crystal Engineering
| 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[11a-S422-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

10:00 AM - 10:15 AM

[11a-S422-3] Electron activation energy in Si doped GaAsN as a function of Si impurity concentration

〇Takashi Tsukasaki¹, Ren Hiyoshi¹, Miki Fujita², Toshiki Makimoto¹ (1.Waseda Univ., 2.NIT, Ichinoseki College)