Masumi Sakamoto

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 1:30 PM - 7:00 PM W541 (W541)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[11p-W541-1~20] 15.4 III-V-group nitride crystals

4:30 PM - 4:45 PM

[11p-W541-12] Characteristics of polycrystalline InN grown on AlN based buffer layers

〇Masumi Sakamoto¹, Atsushi Kobayashi¹, Kohei Ueno¹, Hiroshi Fujioka^1,2 (1.IIS, The Univ. of Tokyo, 2.JST-ACCEL)