The 66th JSAP Spring Meeting, 2019

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11p-W541-1~20] 15.4 III-V-group nitride crystals

Mon. Mar 11, 2019 1:30 PM - 7:00 PM W541 (W541)

Munetaka Arita(Univ. of Tokyo), Ryuji Katayama(Osaka Univ.), Atsushi Kobayashi(Univ. of Tokyo)

4:30 PM - 4:45 PM

[11p-W541-12] Characteristics of polycrystalline InN grown on AlN based buffer layers

〇Masumi Sakamoto1, Atsushi Kobayashi1, Kohei Ueno1, Hiroshi Fujioka1,2 (1.IIS, The Univ. of Tokyo, 2.JST-ACCEL)

Keywords:InN, fused silica glass