Naohisa Inoue

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Speaker, Author, Co-Author

Tue. Mar 12, 2019 1:30 PM - 5:00 PM M111 (H111)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[12p-M111-1~13] 15.7 Crystal characterization, impurities and crystal defects

3:45 PM - 4:00 PM

[12p-M111-9] Quality of silicon substrate and point defects (1) 4.5 Eras in 70 years

〇Naohisa Inoue^1,2 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

4:00 PM - 4:15 PM

[12p-M111-10] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(14) NO pairs, behavior and measurement

〇Naohisa Inoue^1,2, Shuichii Kawamata², Shuichi Okuda² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

4:15 PM - 4:30 PM

[12p-M111-11] Measurement of carbon concentration in silicon crystal
(XVIII) Calibration between infrared absorption and SIMS

〇Naohisa Inoue^1,2, Shuichi Kawamata², Shuichi Okuda² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)