Oral presentation

12 Organic Molecules and Bioelectronics » 12.4 Organic light-emitting devices and organic transistors

[10p-S222-1~15] 12.4 Organic light-emitting devices and organic transistors

Sun. Mar 10, 2019 1:45 PM - 6:00 PM S222 (S222)

Takashi Nagase(Osaka Pref. Univ.), Takeo Minari(NIMS)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[10p-S222-1] Band-like transport in thin-film transistors of organic semiconductor with bilayer-unit

〇(D)Takamasa Hamai¹, Shunto Arai¹, Satoru Inoue^2,3, Tatsuo Hasegawa^1,2 (1.U. Tokyo, 2.AIST-FLEC, 3.Nippon Kayaku)

2:00 PM - 2:15 PM

▲ [10p-S222-2] Melt-processing of highly crystalline organic semiconducting layers for organic optoelectronics

〇JeanCharles Maurice Ribierre^1,2, Zhao Li^1,2, Masanobu Uchiyama^3,4, Tetsuya Aoyama⁴, Anthony D'Aleo⁵, Fabrice Mathevet⁶, Chihaya Adachi^1,2 (1.OPERA, Kyushu Univ., 2.JST-ERATO, 3.University of Tokyo, 4.RIKEN, 5.CNRS-UMI, 6.Sorbonne University)

2:15 PM - 2:30 PM

△ [10p-S222-3] A Technique of Transferring Solution Processed Organic Semiconductor Thin Film onto Highly Hydrophobic Substrate and its Application to Field-Effect Transistors

〇Tatsuyuki Makita^1,2, Shohei Kumagai¹, Mari Sasaki¹, Shun Watanabe^1,2,3, Toshihiro Okamoto^1,2,3, Jun Takeya^1,2,4 (1.Univ. of Tokyo, 2.OPERANDO-OIL, 3.JST-PRESTO, 4.NIMS)

2:30 PM - 2:45 PM

△ [10p-S222-4] Low-voltage and Stable Operation of Solution-Processed Organic Transistors Based on Ultrahydrophobic Carrier Transport Interface

〇(D)Gyo Kitahara¹, Takamasa Hamai¹, Satoshi Matsuoka¹, Shunto Arai¹, Tatsuo Hasegawa^1,2 (1.Univ. Tokyo, 2.AIST-FLEC)

2:45 PM - 3:00 PM

△ [10p-S222-5] Low Voltage Operation for Pentacene-based Pseudo-CMOS utilizing Threshold Voltage Control by N-doped LaB₆ Interfacial Layer

〇(D)Yasutaka Maeda¹, Kyung Eun Park¹, Yuki Komatsu¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

3:00 PM - 3:15 PM

△ [10p-S222-6] High-Speed Organic Single-Crystal Transistor by Damage-Free Lithography Process

〇(DC)Akifumi Yamamura^1,2, Takaaki Sakon¹, Mari Sasaki¹, Shun Watanabe^1,2,3, Toshihiro Okamoto^1,2,3, Jun Takeya^1,2,4,5 (1.Univ. of Tokyo, 2.OPERANDO-OIL, 3.JST PRESTO, 4.NIMS, 5.PI-CRYSTAL Inc.)

3:30 PM - 3:45 PM

[10p-S222-7] Stability of organic physically unclonable function on flexible substrate

〇Kazunori Kuribara¹, Taiki Nobeshima¹, Atsushi Takei¹, Sei Uemura¹, Manabu Yoshida¹ (1.AIST)

3:45 PM - 4:00 PM

[10p-S222-8] Study on ambipolar charge states and molecular orientation in organic transistors by ESR spectroscopy

〇Masato Yamazoe¹, Shohei Iguchi¹, Naho Tsunetomo¹, Kazuhiro Marumoto^1,2 (1.Tsukuba Univ., 2.TREMS)

4:00 PM - 4:15 PM

[10p-S222-9] Role of Alkyl-Chain Ordering in Solid-Solid Phase Transitions of Layered-Crystalline Organic Semiconductors

〇Shunto Arai^1,2, Satoru Inoue³, Toshiki Higashino², Mutsuo Tanaka⁴, Tatsuo Hasegawa^1,2 (1.Univ. of Tokyo, 2.AIST, 3.Nippon-Kayaku, 4.Saitama Inst. Tech.)

4:15 PM - 4:30 PM

[10p-S222-10] Frequency characteristics of organic transistors in trans-diode mode

〇Yu Suenaga¹, Takashi Nagase^1,2, Takashi Kobayashi^1,2, Hiroyoshi Naito^1,2 (1.Osaka Pref. Univ., 2.RIMED)

4:30 PM - 4:45 PM

[10p-S222-11] Voltage and Frequency Characteristics in Organic MOS Capacitors

〇Yoshinari Kimura¹, Yoshiaki Hattori¹, Masatoshi Kitamura¹ (1.Kobe Univ.)

4:45 PM - 5:00 PM

[10p-S222-12] Analysis of holes trap capacity in a low-voltage operation organic field effect transistor memory

〇Yasuyuki Abe¹, Heisuke Sakai¹, Hideyuki Murata¹ (1.JAIST)

5:15 PM - 5:30 PM

▲ [10p-S222-13] Magnetophotocurrent of Field Effect Transistors Based on Ternary Device of Tetracene/Pentacene/Fullerene

〇Nguyen Quang Loc¹, Toan Pham-song¹, Hirokazu Tada¹ (1.Osaka Univ.)

5:30 PM - 5:45 PM

[10p-S222-14] Electron-withdrawing SAM-material-added Organic Semiconducting Ink to Reduce Fabrication Process

〇Katsumasa Nakahara¹, Yusuke Yamanashi¹, Toshihiro Koike¹ (1.JNC Petrochemical Corporation)

5:45 PM - 6:00 PM

[10p-S222-15] First-principles study on clustering and diffusion of metal atoms in SAM film

〇Shunta Watanabe¹, Nakayama Takashi¹ (1.Chiba univ.)

Session information

[10p-S222-1~15] 12.4 Organic light-emitting devices and organic transistors

[10p-S222-1] Band-like transport in thin-film transistors of organic semiconductor with bilayer-unit

▲ [10p-S222-2] Melt-processing of highly crystalline organic semiconducting layers for organic optoelectronics

△ [10p-S222-3] A Technique of Transferring Solution Processed Organic Semiconductor Thin Film onto Highly Hydrophobic Substrate and its Application to Field-Effect Transistors

△ [10p-S222-4] Low-voltage and Stable Operation of Solution-Processed Organic Transistors Based on Ultrahydrophobic Carrier Transport Interface

△ [10p-S222-5] Low Voltage Operation for Pentacene-based Pseudo-CMOS utilizing Threshold Voltage Control by N-doped LaB₆ Interfacial Layer

△ [10p-S222-6] High-Speed Organic Single-Crystal Transistor by Damage-Free Lithography Process

[10p-S222-7] Stability of organic physically unclonable function on flexible substrate

[10p-S222-8] Study on ambipolar charge states and molecular orientation in organic transistors by ESR spectroscopy

[10p-S222-9] Role of Alkyl-Chain Ordering in Solid-Solid Phase Transitions of Layered-Crystalline Organic Semiconductors

[10p-S222-10] Frequency characteristics of organic transistors in trans-diode mode

[10p-S222-11] Voltage and Frequency Characteristics in Organic MOS Capacitors

[10p-S222-12] Analysis of holes trap capacity in a low-voltage operation organic field effect transistor memory

▲ [10p-S222-13] Magnetophotocurrent of Field Effect Transistors Based on Ternary Device of Tetracene/Pentacene/Fullerene

[10p-S222-14] Electron-withdrawing SAM-material-added Organic Semiconducting Ink to Reduce Fabrication Process

[10p-S222-15] First-principles study on clustering and diffusion of metal atoms in SAM film

Authentication

Session information

[10p-S222-1~15] 12.4 Organic light-emitting devices and organic transistors

▲ [10p-S222-2] Melt-processing of highly crystalline organic semiconducting layers for organic optoelectronics

△ [10p-S222-3] A Technique of Transferring Solution Processed Organic Semiconductor Thin Film onto Highly Hydrophobic Substrate and its Application to Field-Effect Transistors

△ [10p-S222-4] Low-voltage and Stable Operation of Solution-Processed Organic Transistors Based on Ultrahydrophobic Carrier Transport Interface

△ [10p-S222-5] Low Voltage Operation for Pentacene-based Pseudo-CMOS utilizing Threshold Voltage Control by N-doped LaB6 Interfacial Layer

△ [10p-S222-6] High-Speed Organic Single-Crystal Transistor by Damage-Free Lithography Process

▲ [10p-S222-13] Magnetophotocurrent of Field Effect Transistors Based on Ternary Device of Tetracene/Pentacene/Fullerene

Authentication

△ [10p-S222-5] Low Voltage Operation for Pentacene-based Pseudo-CMOS utilizing Threshold Voltage Control by N-doped LaB₆ Interfacial Layer