Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11a-PB4-1~18] 15.4 III-V-group nitride crystals

Mon. Mar 11, 2019 9:30 AM - 11:30 AM PB4 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[11a-PB4-1] GaN growth on substrates with AlN structures

〇Masayuki Nakamura¹, Takayuki Kobayashi¹, Koichirou Yuki², Ryo Inomoto², Narihito Okada², Toshiaki Tatsuta¹, Kazuyuki Tadatomo², Shin-ichi Motoyama¹ (1.Samco Inc., 2.Yamaguchi Univ.)

9:30 AM - 11:30 AM

[11a-PB4-2] I-V Property of Simple P-N Junction GaN Fabricated on Graphite Substrate

〇Takashi Inoue¹, Go Sajiki², Toshihiro Hosokawa¹, Akiyoshi Takeda¹, Hiroshi Okano² (1.Toyo Tanso Co., Ltd., 2.NIT, Kagawa College)

9:30 AM - 11:30 AM

[11a-PB4-3] Study of surface contamination on single-crystalline GaN layer (Ⅱ)

〇Ai Mizuno¹, Masaki Iwamoto¹, Takuya Osada¹, Reo Suzuki¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.School of Engineering, Tokyo Denki Univ.)

9:30 AM - 11:30 AM

[11a-PB4-4] Study on Fabrication and Evaluation of GaN thin films by RF Magnetron Sputtering

〇Toru Nakajima¹, Yuuki Saito¹, Takuya Miyamoto¹, Hiroshi Kuroda¹, Yuuki Sato¹, Tadashi Ohachi¹, Shinzo Yoshikado¹, Kikuro Takemoto², Hiroyuki Uno², Naoto Kimura², Masanori Takasaki² (1.Doshisha Univ., 2.Yamanakahutech Corp.)

9:30 AM - 11:30 AM

[11a-PB4-5] Repair of thermally degraded Ultra-thin AlN intermediate layer on Epitaxial Graphene

〇Yuta Sato¹, Taiji Terai¹, Yuta Kamada¹, Tomoya Takeuchi¹, Akihiro Hashimoto¹ (1.Fukui Univ.)

9:30 AM - 11:30 AM

[11a-PB4-6] Theoretical investigations for growth modes of AlGaN thin films on AlN(0001) substrate

〇(M2)Shinnosuke Tsumuki¹, Abdul-Muizz Pradipto¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (1.Mie Univ.)

9:30 AM - 11:30 AM

[11a-PB4-7] Growth temperature dependence of high In composition GaInN grown by RF-MBE

〇Ryosuke Yoshida¹, Yusuke Nakajima¹, Hiroki Hirukawa¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Toru Honda¹ (1.Kogakuin Univ.)

9:30 AM - 11:30 AM

[11a-PB4-8] Investigation of the heating method for substrates to improve the quality of h-BN thin films grown by CVD

〇Tomoyasu Nakama¹, Takumi Kawarazaki¹, Kazuki Matsusita¹, Hiroko Kominami¹, Kazuhiko Hara^2,3 (1.GSIST, Shizuoka Univ., 2.GSST, Shizuoka Univ., 3.RIE, Shizuoka Univ.)

9:30 AM - 11:30 AM

[11a-PB4-9] Relationship between Li concentration of a Na flux and Li concentration of a GaN crystal after heating in the flux

〇Takumi Yamada¹, Masayuki Imanishi¹, Kosuke Murakami¹, Kosuke Nakamura¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Grad. Sch. of Eng. Osaka Univ.)

9:30 AM - 11:30 AM

[11a-PB4-10] Emission Enhancements of InGaN/GaN MQW beyond Skin Depth of Surface Plasmon

〇Fumiya Murao¹, Toshiki Nakamura¹, Tetsuya Matsuyama¹, Kenji Wada¹, Mitsuru Funato², Yoichi Kawakami², Koichi Okamoto¹ (1.Osaka Pref. Univ., 2.Kyoto Univ.)

9:30 AM - 11:30 AM

[11a-PB4-11] Surface plasmon enhanced emissions from semipolar InGaN/GaN quantum wells

〇Jun Kametani¹, Toshiki Nakamura¹, Fumiya Murao¹, Tetsuya Matsuyama¹, Kenji Wada¹, Okada Narihito², Tadatomo Kazuyuki², Koichi Okamoto¹ (1.Osaka Pref.Univ, 2.Yamaguchi Univ)

9:30 AM - 11:30 AM

[11a-PB4-12] Effects of compositional and interfacial fluctuations on exciton linewidth in AlGaN-based quantum well structure

Shunta Nosaka¹, 〇Hideaki Murotani¹, Yoichi Yamada² (1.NIT, Tokuyama Coll., 2.Yamaguchi Univ.)

9:30 AM - 11:30 AM

[11a-PB4-13] Spectroscopic ellipsometry characterization of GaN surface exposed to NH₃ plasma

〇Naoto Kumagai^1,3, Hirotomo Itagaki², Jaeho Kim^3,1, Hisato Ogiso², Xue-lun Wang^1,3,4, Shingo Hirose², Hajime Sakakita^3,1, Mitsuaki Shimizu^1,4 (1.AIST-NU GaN-OIL, 2.AMRI, AIST, 3.ESPRIT, AIST, 4.IMaSS, Nagoya Univ.)

9:30 AM - 11:30 AM

[11a-PB4-14] Behavior of basal plane dislocations in 4H-SiC and GaN under electron beam irradiation on m-planes

〇Yukari Ishikawa^1,2, Masaki Sudo², Yoshihiro Sugawara¹, Yong-Zhao Yao¹, Masashi Kato², Makoto Miyoshi², Takashi Egawa² (1.JFCC, 2.Nagoya Inst. Tech.)

9:30 AM - 11:30 AM

[11a-PB4-15] First-principles calculations of surface electronic states and field effects in GaN

〇(B)Masaki Saito¹, Takuya Sekikawa², Susumu Sasaki^3,4, Yoshiaki Ono¹ (1.Faculty of Science, Niigata Univ., 2.Graduate School of Science and Technology, Niigata Univ., 3.Faculty of Engineering, Niigata Univ., 4.AMED SENTAN)

9:30 AM - 11:30 AM

▲ [11a-PB4-16] Characterization of a GaN wafer and a homo-epitaxial layer by synchrotron X-ray topography techniques

〇(PC)Okkyun Seo¹, Jaemyung Kim¹, Satoshi Hiroi¹, Yoshihiro Irokawa¹, Toshihide Nabatame¹, Yasuo Koide¹, Osami Sakata¹ (1.NIMS)

9:30 AM - 11:30 AM

[11a-PB4-17] First-principles calculations of spontaneous polarization in GaN

〇Takuya Sekikawa¹, Kenji Shiraishi², Susumu Sasaki^3,4, Yoshiaki Ono⁵ (1.Graduate School of Science & Technology Niigata Univ., 2.IMaSS Nagoya Univ., 3.Faculty of Engineering Niigata Univ., 4.AMED SENTAN, 5.Faculty of Science, Niigata Univ.)

9:30 AM - 11:30 AM

[11a-PB4-18] Investigation of water splitting using NiO/InGaN/n-GaN photoanodes

〇Kazuhide Kumakura¹, Yuya Uzumaki², Yoko Ono², Takeshi Komatsu² (1.NTT BRL, 2.NTT DTL)

Session information

[11a-PB4-1~18] 15.4 III-V-group nitride crystals

[11a-PB4-1] GaN growth on substrates with AlN structures

[11a-PB4-2] I-V Property of Simple P-N Junction GaN Fabricated on Graphite Substrate

[11a-PB4-3] Study of surface contamination on single-crystalline GaN layer (Ⅱ)

[11a-PB4-4] Study on Fabrication and Evaluation of GaN thin films by RF Magnetron Sputtering

[11a-PB4-5] Repair of thermally degraded Ultra-thin AlN intermediate layer on Epitaxial Graphene

[11a-PB4-6] Theoretical investigations for growth modes of AlGaN thin films on AlN(0001) substrate

[11a-PB4-7] Growth temperature dependence of high In composition GaInN grown by RF-MBE

[11a-PB4-8] Investigation of the heating method for substrates to improve the quality of h-BN thin films grown by CVD

[11a-PB4-9] Relationship between Li concentration of a Na flux and Li concentration of a GaN crystal after heating in the flux

[11a-PB4-10] Emission Enhancements of InGaN/GaN MQW beyond Skin Depth of Surface Plasmon

[11a-PB4-11] Surface plasmon enhanced emissions from semipolar InGaN/GaN quantum wells

[11a-PB4-12] Effects of compositional and interfacial fluctuations on exciton linewidth in AlGaN-based quantum well structure

[11a-PB4-13] Spectroscopic ellipsometry characterization of GaN surface exposed to NH₃ plasma

[11a-PB4-14] Behavior of basal plane dislocations in 4H-SiC and GaN under electron beam irradiation on m-planes

[11a-PB4-15] First-principles calculations of surface electronic states and field effects in GaN

▲ [11a-PB4-16] Characterization of a GaN wafer and a homo-epitaxial layer by synchrotron X-ray topography techniques

[11a-PB4-17] First-principles calculations of spontaneous polarization in GaN

[11a-PB4-18] Investigation of water splitting using NiO/InGaN/n-GaN photoanodes

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