Yukari Ishikawa

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 9:30 AM - 11:30 AM PB4 (PB)

Poster presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[11a-PB4-1~18] 15.4 III-V-group nitride crystals

9:30 AM - 11:30 AM

[11a-PB4-14] Behavior of basal plane dislocations in 4H-SiC and GaN under electron beam irradiation on m-planes

〇Yukari Ishikawa^1,2, Masaki Sudo², Yoshihiro Sugawara¹, Yong-Zhao Yao¹, Masashi Kato², Makoto Miyoshi², Takashi Egawa² (1.JFCC, 2.Nagoya Inst. Tech.)

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