[10a-70A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[10a-70A-5] Structure of nitrogen-incorporated defects in oxidation films of SiC and their electronic states

〇Yuichiro Matsushita¹, Takuma Kobayashi¹ (1.Tokyo Institute of Technology)

Keywords:SiC, NO treatment, defect

In SiC-MOS devices, NO treatment is adopted for the reduction of high-density interface defects at SiC/SiO₂. In fact, most portion of N atoms introduced by the NO treatment passivate the interface defects at the SiC/SiO₂. In contrast, some portion of N atoms are incoprporated in SiO₂ film leading to the degradation in the electron mobility of the device. The identification of the microscopic structure of the N-related defects in SiO₂ is an important issue. In this study, we have clarified the atomic structure of the N-related defects and its electronic structures on the basis of the ab-intio theoretical calculations.