[10a-70A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[10a-70A-8] Effect of Deep Level Donor in Channel Region on SiC MOSFETs

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Hiroyuki Amishiro¹, Hiroshi Watanabe¹, Koji Kita², Naruhisa Miura¹ (1.Mitsubishi Electric Corp., 2.Univ. of Tokyo)

Keywords:SiC, MOSFET, donor

A key challenge for 4H-SiC MOSFETs is to achieve both low resistance and high threshold voltage (V_th). In general, channel resistance (R_ch) and V_th shows a trade-off relationship. To improve this trade-off relationship, we investigated the effect of deep level donors doped in channel region on the channel characteristic. As an example of deep level donors in 4H-SiC, we doped sulphur in channel region of 4H-SiC MOSFETs. It is found that this improves the trade-off relationship between R_ch and V_th compared with the conventional.