[10a-M114-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

△ [10a-M114-5] Prominent Ridge Control of LTPS Thin Films by Laser Annealing

〇(B)Fuminobu Hamano¹, Kaname Imokawa^1,2, Daisuke Nakamure¹, Hiroshi Ikenoue^1,2 (1.Kyushu Univ., 2.Dept. of Gigaphoton Next GLP, Kyushu Univ.)

Keywords:Laser Annealing, Poly-Si, TFT

Thin film transistors (TFTs) are used as switching devices in flat panel displays (FPDs). Low temperature poly-Si (LTPS) films are widely used as a channel material of the TFTs. Conventionally, the LTPS is formed by an excimer laser annealing (ELA) process. It is well known that prominent ridges are formed on the LTPS after ELA due to volume expansion by crystallization, and gate leakage current of the TFTs are caused by formation of the prominent ridges. We thought that height of the prominent ridges could be changed by additional irradiation of excimer laser, and the yield of TFTs could be improved. In this presentation, we report on the change in height of the prominent ridges due to additional laser irradiation and its mechanism of the height changes.