[10a-M114-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

△ [10a-M114-7] Grain-Shape Control of LTPS Thin Films by Selective Laser Annealing

〇(B)Takahiro Yamada¹, Kaname Imokawa^1,2, Daisuke Nakamura¹, Tetsuya Goto³, Hiroshi Ikenoue^1,2 (1.Kyushu Univ., 2.Dept. of Gigaphoton Next GLP, Kyushu Univ., 3.Tohoku Univ.)

Keywords:Laser Annealing, Poly-Si, TFT

In the selective laser annealing (SLA) method, Excimer laser beam is selectively irradiated to a channel region of a low-temperature crystallization of poly-Si (LTPS) thin-film transistor (TFT). In this method, it is possible to solve an increase in the size of the display substrate. However, the size of the grain is random, and the TFT characteristics are unstable. Therefore, in previous study, we propose to make multi-line beam using a mask to induce lateral grain growth. Therefore, the number of grain boundaries at the channel region can be controlled. In this presentation, we report that the grain shape and the number of grain boundaries can be controlled using a new dot pattern mask.