The 66th JSAP Spring Meeting, 2019

Presentation information

Poster presentation

9 Applied Materials Science » 9.1 Dielectrics, ferroelectrics

[10a-PA4-1~10] 9.1 Dielectrics, ferroelectrics

Sun. Mar 10, 2019 9:30 AM - 11:30 AM PA4 (PA)

9:30 AM - 11:30 AM

[10a-PA4-7] Study on Piezoelectricity of Zr-Doped AlN by First-Principles Calculation

Kazuya Eto1,2, Kenji Hirata2, Sri Ayu Anggraini2, Morito Akiyama2, Masato Uehara1,2, Hiroshi Yamada1,2 (1.Kyushu Univ., 2.AIST)

Keywords:piezoelectric material, nitride, first-principles calculation

AlN with wurtzite structure is a piezoelectric material having a high Q factor and good temperature stability. Therefore, it is used for FBAR filters in mobile communication terminals. The improvement of piezoelectric response has been reported in Sc-doped AlN. On the otherhand, replacing additional element for AlN from Sc to other elements has been investigated by experiments and theoretical calculations. In this study, the piezoelectric constant of Zr-doped AlN was evaluated by first-principles calculations. The calculated piezoelectric constant showed the improvement by the addition of Zr for AlN in analogy with the case of Sc-doped AlN.