Poster presentation

[10a-PA4-1~10] 9.1 Dielectrics, ferroelectrics

Sun. Mar 10, 2019 9:30 AM - 11:30 AM PA4 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[10a-PA4-1] Transition mechanism of a proton conductor CsHSO4 in Raman spectroscopy.

〇Yoshiyuki Matsumoto¹, Ryotaro Teranishi¹ (1.Kindai Univ.)

9:30 AM - 11:30 AM

△ [10a-PA4-2] Composition dependence of ferroelectric characteristics, crystal and electronic structures
of (K, Na)NbO₃-BiAlO₃based ferroelectric ceramics

〇Yoshiaki Hirasawa¹, Naoya Ishida¹, Naoto Kitamura¹, Yasushi Idemoto¹ (1.Tokyo Univ. of Science)

9:30 AM - 11:30 AM

▼ [10a-PA4-3] Fabrication of textured BNT-based green body with high magnetic field electrophoretic deposition (HM-EPD)

〇(P)MinSu Kim¹, Ichiro Fujii¹, Shintaro Ueno¹, Tohru S. Suzuki², Tetsuo Uchikoshi², Satoshi Wada¹ (1.Univ. of Yamanashi, 2.NIMS)

9:30 AM - 11:30 AM

▼ [10a-PA4-4] Fabrication of textured (Bi_0.5K_0.5)TiO₃piezoelectric ceramics via conventional sintering method

〇(D)Gopal Prasad Khanal¹, Ichiro Fujii¹, Sangwook Kim¹, Shintaro Ueno¹, Tohru S. Suzuki², Satoshi Wada¹ (1.Univ. of Yamanashi, 2.NIMS)

9:30 AM - 11:30 AM

▲ [10a-PA4-5] Material design direction using materials softening for high performance piezoelectric ceramics

〇(D)Sangwook Kim¹, Gopal Prasad Khanal¹, Hyunwook Nam¹, Ichiro Fujii¹, Shintaro Ueno¹, Chikako Moriyoshi², Yoshihiro Kuroiwa², Satoshi Wada¹ (1.University of Yamanashi, 2.Hiroshima University)

9:30 AM - 11:30 AM

[10a-PA4-6] Physical Properties Evaluation of Piezoelectric Nitride Mg,Nb Codoped AlN by First-principles Calculation

〇Yuto Mori¹, Kenji Hirata², Sri Ayu Anggraini², Morito Akiyama², Masato Uehara^2,1, Hiroshi Yamada^2,1 (1.Kyushu Univ., 2.AIST)

9:30 AM - 11:30 AM

[10a-PA4-7] Study on Piezoelectricity of Zr-Doped AlN by First-Principles Calculation

〇Kazuya Eto^1,2, Kenji Hirata², Sri Ayu Anggraini², Morito Akiyama², Masato Uehara^1,2, Hiroshi Yamada^1,2 (1.Kyushu Univ., 2.AIST)

9:30 AM - 11:30 AM

[10a-PA4-8] Improvement of Piezoelectric Properties in AlN Thin Film by Yb addition

〇(M1C)Yuki Amano¹, Masato Uehara^1,2, Sri Ayu Anggraini², Kenji Hirata², Hiroshi Yamada^1,2, Morito Akiyama² (1.Kyushu Univ., 2.AIST)

9:30 AM - 11:30 AM

[10a-PA4-9] Bonding analyses of Mg+X (X= Ti, Zr, Hf, Nb) doped AlN by the COHP method

〇Kenji Hirata¹, Hiroshi Yamada¹, Sri Ayu Anggraini¹, Masato Uehara¹, Morito Akiyama¹ (1.AIST)

9:30 AM - 11:30 AM

▲ [10a-PA4-10] Effect of different divalent cations on the piezoelectric and mechanical properties of MTiAlN-based thin films (M = Mg or Zn)

〇Sri Ayu Anggraini¹, Masato Uehara¹, Kenji Hirata¹, Hiroshi Yamada¹, Morito Akiyama¹ (1.AIST)

Oral presentation

[10p-M116-1~22] 9.1 Dielectrics, ferroelectrics

Sun. Mar 10, 2019 1:00 PM - 7:00 PM M116 (H116)

Hajime Nagata(Tokyo Univ. of Sci.), Satoshi Wada(Univ. of Yamanashi), Takaaki Morimoto(National Defence Academy)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[10p-M116-1] Composition Dependence and Depth Profile of Density of Oxygen Vacancy in Solution-Processed IGZO

〇Takaaki Morimoto^1,3, Yicheng Yang^1,3, Nobuko Fukuda³, Yoshimichi Ohki^1,2 (1.SASE of Waseda Univ., 2.RIMST of Waseda Univ., 3.FLEC of AIST)

1:15 PM - 1:30 PM

[10p-M116-2] Effect of In/Nb arrangement on inhomogeneity in Pb(In_1/2Nb_1/2)O₃probed by angle-resolved polarized Raman spectroscopy

〇Shinya Tsukada¹, Kenji Ohwada², Yasuhiro Fujii³, Shigeo Mori⁴, Hidehiro Ohwada⁵, Yukikuni Akishige¹ (1.Shimane Univ., 2.QST, 3.Ritsumeikan Univ., 4.Osaka Pref. Univ., 5.Gifu Univ.)

1:30 PM - 1:45 PM

[10p-M116-3] Dielectric measurement with using a resonance at the back side of the probe at 300 GHz band

〇Ryo Sakamaki^1,2, Masahiro Horibe¹, Takaaki Tsurumi² (1.AIST, 2.TITECH)

1:45 PM - 2:00 PM

[10p-M116-4] A discovery and interpretation of new theory of high withstand voltage for high-temperature capacitor material

〇Masaya Karube¹, Takuya Hoshina¹, Hiroaki Takeda¹, Takaaki Tsurumi¹ (1.Tokyo Tech.)

2:00 PM - 2:15 PM

[10p-M116-5] Characterization of thickness shear mode vibration of gehlenite single crystals
for high temperature microbalance application

〇Takuto Oshima¹, Takuya Hoshina¹, Takaaki Tsurumi¹, Hiroaki Takeda¹ (1.Tokyo Tech.)

2:15 PM - 2:30 PM

△ [10p-M116-6] Piezoelectric properties of langasite-type Ba₃TaGa₃Si₂O₁₄single crystals

〇(M1C)Haruki Usui¹, Takuya Hoshina¹, Takaaki Tsurumi¹, Hiroaki Takeda¹ (1.Tokyo tech.)

2:30 PM - 2:45 PM

△ [10p-M116-7] Fabrication and Evaluation of Dielectric Property of K(Ta, Nb)Si₂O₇ Single Crystals

〇(M1C)Miho Onuma¹, Hiroaki Takeda¹, Takaaki Tsurumi¹, Takuya Hoshina¹ (1.Tokyo Tech.)

2:45 PM - 3:00 PM

[10p-M116-8] Fabrication of Defect-less BiFeO₃-based Ceramics for Improving Piezoelectric Property

〇(M2)Tomoya Aizawa¹, Ichiro Fujii¹, Shintaro Ueno¹, Tohru Suzuki², Satoshi Wada¹ (1.Univ. of Yamanashi, 2.National Institute for Materials Science)

3:15 PM - 3:30 PM

▲ [10p-M116-9] Preparation of para electric Barium Titanate ceramics by Mn-Nb co-doping for DC-bias free dielectrics

〇(M2)Piyush Sapkota¹, Ichiro Fujii¹, Shintaro Ueno¹, Satoshi Wada¹ (1.Univ. of Yamanashi)

3:30 PM - 3:45 PM

▼ [10p-M116-10] Development of BaTiO₃-Bi(Mg_1/2Ti_1/2)O₃-BiFeO₃ ceramics by various ceramic processing for enhanced piezoelectric properties

〇(M2)HyunWook Nam¹, Ichiro Fujii¹, Sangwook Kim¹, Tomoya Aizawa¹, Shintaro Ueno¹, Satoshi Wada¹ (1.University of Yamanashi)

3:45 PM - 4:00 PM

[10p-M116-11] Preparation of BaTiO₃ Ceramics below 100^oC and Their Dielectric Properties

〇(M2)Ryoko Murakami¹, Shintaro Ueno¹, Ichiro Fujii¹, Satoshi Wada¹ (1.Univ. of Yamanashi)

4:00 PM - 4:15 PM

[10p-M116-12] Preparation of Perovskite-type Oxides Containing Rb by High-pressure Reactive Sintering Method

〇Yusuke Yasue¹, Ueno Shintaro¹, Fujii Ichiro¹, Muraba Yoshinori², Hosono Hideo^2,3, Wada Satoshi¹ (1.Univ. of Yamanashi, 2.MCES, Tokyo Tech., 3.MSL, Tokyo Tech.)

4:15 PM - 4:30 PM

[10p-M116-13] Fabrication of Insulating/Conductive Oxide Composite Ceramics with Epitaxial Interfaces for High-performance Capacitors

〇Yuya Hattori¹, Shintaro Ueno¹, Ichiro Fujii¹, Satoshi Wada¹ (1.Yamanashi Univ.)

4:30 PM - 4:45 PM

[10p-M116-14] Fabrication of KNbO₃-Nanocube Assembly by Utilizing Liquid-Liquid Phase Separation

〇(M2)Ryoichi Kunisada¹, Tsukasa Chikata¹, Shintaro Ueno¹, Ichiro Fujii¹, atoshi Wada¹ (1.Univ. of Yamanashi)

4:45 PM - 5:00 PM

[10p-M116-15] Dependence of lattice distortion by quenching effect for depolarization temperature on (Bi_0.5Na_0.5)TiO₃-(Bi_0.5Li_0.5)TiO₃-(Bi_0.5K_0.5)TiO₃ ceramics

〇Yuka Takagi¹, Tatsuki Miura¹, Hajime Nagata¹, Tadashi Takenaka¹ (1.Tokyo University of Science)

5:15 PM - 5:30 PM

[10p-M116-16] [Young Scientist Presentation Award Speech] Orientational Correlation between Ferroelectric Domain Walls and Crystallographic Axis in Organic Ferroelectric Thin Films

〇Yohei Uemura¹, Shunto Arai¹, Junya Tsutsumi², Satoshi Matsuoka¹, Reiji Kumai³, Sachio Horiuchi², Tatsuo Hasegawa^1,2 (1.U. Tokyo, 2.AIST, 3.KEK)

5:30 PM - 5:45 PM

△ [10p-M116-17] Effect of substitution of other elements on ferroelectric characteristics, crystal and electronic structures of 0.4Bi_0.5K_0.5TiO₃-0.6BiFeO₃-based ferroelectric ceramics

〇Junichiro Maie¹, Naoya Ishida¹, Naoto Kitamura¹, Yasushi Idemoto¹ (1.Tokyo Univ. of Science)

5:45 PM - 6:00 PM

[10p-M116-18] Photovoltaic effect in electronic-controlled ferroelectric BaTiO3 single crystals

〇(M1)Yuki Taniguchi^1,2, Yuji Noguchi^1,2, Masaru Miyayama^1,2, Ryotaro Inoue³ (1.Tokyo Univ., 2.Miyayama Lab., 3.Nihon Univ.)

6:00 PM - 6:15 PM

[10p-M116-19] Direct measurements of electrocaloric effect in acceptor doped BaTiO₃ ceramics

〇(M1)Tsubasa Shiono¹, Yuji Noguchi¹, Masaru Miyayama¹ (1.Univ. of Tokyo)

6:15 PM - 6:30 PM

△ [10p-M116-20] Electric field induced phase transitions in nonstoichiometric (Bi, Na)TiO₃ perovskites

〇(M1)Hayate Nomoto¹, Yuki Kitanaka¹, Yuji Noguchi¹, Masaru Miyayama¹ (1.Univ. of Tokyo)

6:30 PM - 6:45 PM

[10p-M116-21] Controlled oxygen-vacancy distribution in Ferroelectrics -Materials Design exploiting the interaction with transition metal ions-

〇Yuji Noguchi¹, Hiroki Matsuo², Masaru Miyayama¹ (1.Univ. of Tokyo (SOE), 2.Univ. of Tokyo (GSFS))

6:45 PM - 7:00 PM

[10p-M116-22] Electromechanical Properties and Electrocaloric Effects in Anti-Ferroelectric (Pb,La)(Zr,Ti)O₃ Ceramics

〇Hiroshi Maiwa¹ (1.Shonan Inst. Tech.)

Sessions

9 Applied Materials Science » 9.1 Dielectrics, ferroelectrics

[10a-PA4-1~10] 9.1 Dielectrics, ferroelectrics

[10a-PA4-1] Transition mechanism of a proton conductor CsHSO4 in Raman spectroscopy.

△ [10a-PA4-2] Composition dependence of ferroelectric characteristics, crystal and electronic structures
of (K, Na)NbO₃-BiAlO₃based ferroelectric ceramics

▼ [10a-PA4-3] Fabrication of textured BNT-based green body with high magnetic field electrophoretic deposition (HM-EPD)

▼ [10a-PA4-4] Fabrication of textured (Bi_0.5K_0.5)TiO₃piezoelectric ceramics via conventional sintering method

▲ [10a-PA4-5] Material design direction using materials softening for high performance piezoelectric ceramics

[10a-PA4-6] Physical Properties Evaluation of Piezoelectric Nitride Mg,Nb Codoped AlN by First-principles Calculation

[10a-PA4-7] Study on Piezoelectricity of Zr-Doped AlN by First-Principles Calculation

[10a-PA4-8] Improvement of Piezoelectric Properties in AlN Thin Film by Yb addition

[10a-PA4-9] Bonding analyses of Mg+X (X= Ti, Zr, Hf, Nb) doped AlN by the COHP method

▲ [10a-PA4-10] Effect of different divalent cations on the piezoelectric and mechanical properties of MTiAlN-based thin films (M = Mg or Zn)

[10p-M116-1~22] 9.1 Dielectrics, ferroelectrics

[10p-M116-1] Composition Dependence and Depth Profile of Density of Oxygen Vacancy in Solution-Processed IGZO

[10p-M116-2] Effect of In/Nb arrangement on inhomogeneity in Pb(In_1/2Nb_1/2)O₃probed by angle-resolved polarized Raman spectroscopy

[10p-M116-3] Dielectric measurement with using a resonance at the back side of the probe at 300 GHz band

[10p-M116-4] A discovery and interpretation of new theory of high withstand voltage for high-temperature capacitor material

[10p-M116-5] Characterization of thickness shear mode vibration of gehlenite single crystals
for high temperature microbalance application

△ [10p-M116-6] Piezoelectric properties of langasite-type Ba₃TaGa₃Si₂O₁₄single crystals

△ [10p-M116-7] Fabrication and Evaluation of Dielectric Property of K(Ta, Nb)Si₂O₇ Single Crystals

[10p-M116-8] Fabrication of Defect-less BiFeO₃-based Ceramics for Improving Piezoelectric Property

▲ [10p-M116-9] Preparation of para electric Barium Titanate ceramics by Mn-Nb co-doping for DC-bias free dielectrics

▼ [10p-M116-10] Development of BaTiO₃-Bi(Mg_1/2Ti_1/2)O₃-BiFeO₃ ceramics by various ceramic processing for enhanced piezoelectric properties

[10p-M116-11] Preparation of BaTiO₃ Ceramics below 100^oC and Their Dielectric Properties

[10p-M116-12] Preparation of Perovskite-type Oxides Containing Rb by High-pressure Reactive Sintering Method

[10p-M116-13] Fabrication of Insulating/Conductive Oxide Composite Ceramics with Epitaxial Interfaces for High-performance Capacitors

[10p-M116-14] Fabrication of KNbO₃-Nanocube Assembly by Utilizing Liquid-Liquid Phase Separation

[10p-M116-15] Dependence of lattice distortion by quenching effect for depolarization temperature on (Bi_0.5Na_0.5)TiO₃-(Bi_0.5Li_0.5)TiO₃-(Bi_0.5K_0.5)TiO₃ ceramics

[10p-M116-16] [Young Scientist Presentation Award Speech] Orientational Correlation between Ferroelectric Domain Walls and Crystallographic Axis in Organic Ferroelectric Thin Films

△ [10p-M116-17] Effect of substitution of other elements on ferroelectric characteristics, crystal and electronic structures of 0.4Bi_0.5K_0.5TiO₃-0.6BiFeO₃-based ferroelectric ceramics

[10p-M116-18] Photovoltaic effect in electronic-controlled ferroelectric BaTiO3 single crystals

[10p-M116-19] Direct measurements of electrocaloric effect in acceptor doped BaTiO₃ ceramics

△ [10p-M116-20] Electric field induced phase transitions in nonstoichiometric (Bi, Na)TiO₃ perovskites

[10p-M116-21] Controlled oxygen-vacancy distribution in Ferroelectrics -Materials Design exploiting the interaction with transition metal ions-

[10p-M116-22] Electromechanical Properties and Electrocaloric Effects in Anti-Ferroelectric (Pb,La)(Zr,Ti)O₃ Ceramics

Authentication

Sessions

9 Applied Materials Science » 9.1 Dielectrics, ferroelectrics

[10a-PA4-1~10] 9.1 Dielectrics, ferroelectrics

△ [10a-PA4-2] Composition dependence of ferroelectric characteristics, crystal and electronic structuresof (K, Na)NbO3-BiAlO3 based ferroelectric ceramics

▼ [10a-PA4-3] Fabrication of textured BNT-based green body with high magnetic field electrophoretic deposition (HM-EPD)

▼ [10a-PA4-4] Fabrication of textured (Bi0.5K0.5)TiO3 piezoelectric ceramics via conventional sintering method

▲ [10a-PA4-5] Material design direction using materials softening for high performance piezoelectric ceramics

▲ [10a-PA4-10] Effect of different divalent cations on the piezoelectric and mechanical properties of MTiAlN-based thin films (M = Mg or Zn)

[10p-M116-1~22] 9.1 Dielectrics, ferroelectrics

△ [10p-M116-6] Piezoelectric properties of langasite-type Ba3TaGa3Si2O14 single crystals

△ [10p-M116-7] Fabrication and Evaluation of Dielectric Property of K(Ta, Nb)Si2O7 Single Crystals

▲ [10p-M116-9] Preparation of para electric Barium Titanate ceramics by Mn-Nb co-doping for DC-bias free dielectrics

▼ [10p-M116-10] Development of BaTiO3-Bi(Mg1/2Ti1/2)O3-BiFeO3 ceramics by various ceramic processing for enhanced piezoelectric properties

△ [10p-M116-17] Effect of substitution of other elements on ferroelectric characteristics, crystal and electronic structures of 0.4Bi0.5K0.5TiO3-0.6BiFeO3-based ferroelectric ceramics

△ [10p-M116-20] Electric field induced phase transitions in nonstoichiometric (Bi, Na)TiO3 perovskites

Authentication

△ [10a-PA4-2] Composition dependence of ferroelectric characteristics, crystal and electronic structures
of (K, Na)NbO₃-BiAlO₃based ferroelectric ceramics

▼ [10a-PA4-4] Fabrication of textured (Bi_0.5K_0.5)TiO₃piezoelectric ceramics via conventional sintering method

△ [10p-M116-6] Piezoelectric properties of langasite-type Ba₃TaGa₃Si₂O₁₄single crystals

△ [10p-M116-7] Fabrication and Evaluation of Dielectric Property of K(Ta, Nb)Si₂O₇ Single Crystals

▼ [10p-M116-10] Development of BaTiO₃-Bi(Mg_1/2Ti_1/2)O₃-BiFeO₃ ceramics by various ceramic processing for enhanced piezoelectric properties

△ [10p-M116-17] Effect of substitution of other elements on ferroelectric characteristics, crystal and electronic structures of 0.4Bi_0.5K_0.5TiO₃-0.6BiFeO₃-based ferroelectric ceramics

△ [10p-M116-20] Electric field induced phase transitions in nonstoichiometric (Bi, Na)TiO₃ perovskites