The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[10a-S223-1~10] 13.8 Optical properties and light-emitting devices

Sun. Mar 10, 2019 9:30 AM - 12:15 PM S223 (S223)

Haruki Fukada(Kanazawa Inst. of Tech.)

11:45 AM - 12:00 PM

[10a-S223-9] Broadband-sensitive upconversion emission of Er3+, Ni2+-co-doped Ca3Ga2Ge3O12 garnet

Yasuhiko Takeda1, Shintaro Mizuno1, Hom Nath Luitel1, Toshihiko Tani1 (1.Toyota Central R&D Labs.)

Keywords:upconversion, erbium, crystalline silicon solar cells

We have developed a new broadband-sensitive photon upconversion (UC) material that can be used for transparent ceramic plates mounted on the rear faces of crystalline silicon solar cells. We selected the host material of a cubic crystal structure codoped with Er3+ and Ni2+ so that the Ni2+ dopants were fully activated to sensitize the Er3+ emitters. In garnet-type Ca3Ga2Ge3O12 with additional codopants of Nb5+ and Li+ for charge compensation, all the Ni2+ dopants occupied the six-coordinated Ga3+ sites, leading to highly efficient sensitization. Formation of four-coordinated Ni2+ that quenches the UC emission of the Er3+ was prevented, because four-coordinated Ni2+ is much smaller than four-coordinated Ge4+. Additional introduction of Y3+ and Li+ enhanced lattice distortion and consequently improved the UC performance. Thus, the synthesized powder sample exhibited a broadband sensitivity ranging from 1.1 um (the absorption edge of crystalline silicon) to 1.6 um for the UC emission at 0.98 um.