The 66th JSAP Spring Meeting, 2019

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7 Beam Technology and Nanofabrication » 7.5 Ion beams

[10a-S224-1~8] 7.5 Ion beams

Sun. Mar 10, 2019 9:30 AM - 11:30 AM S224 (S224)

Satoshi Abo(Osaka Univ.), Takaaki Aoki(Kyoto Univ.)

9:45 AM - 10:00 AM

[10a-S224-2] Measurement of charge distribution in Si generated by high energy ion incidence (II)

〇Satoshi Abo1, Kenichi Tani1, Fujio Wakaya1, Shinobu Onoda2, Hayato Yamashita1,3, Yuji Miyato1, Masayuki Abe1 (1.Osaka Univ., 2.QST, 3.PRESTO JST)

Keywords:ion beam induced charge, charge distribution