Satoshi Abo

→ Search for Satoshi Abo in Google Scholar

Speaker, Author, Co-Author

Sun. Mar 10, 2019 9:30 AM - 11:30 AM S224 (S224)

Oral presentation
| 7 Beam Technology and Nanofabrication
| 7.5 Ion beams

[10a-S224-1~8] 7.5 Ion beams

9:45 AM - 10:00 AM

[10a-S224-2] Measurement of charge distribution in Si generated by high energy ion incidence (II)

〇Satoshi Abo¹, Kenichi Tani¹, Fujio Wakaya¹, Shinobu Onoda², Hayato Yamashita^1,3, Yuji Miyato¹, Masayuki Abe¹ (1.Osaka Univ., 2.QST, 3.PRESTO JST)