The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[10a-W323-1~9] 6.4 Thin films and New materials

Sun. Mar 10, 2019 9:00 AM - 12:15 PM W323 (W323)

Tetsuo Tsuchiya(AIST)

9:15 AM - 9:30 AM

[10a-W323-2] Study on growth temperatures and relaxation of lattice strain in the epitaxial Pt/SrTiO3(111) films

Masahiro Kasai1, Hideyuki Dohi1 (1.Kyushu Univ.)

Keywords:metal thin films, epitaxial, sputtering, SrTiO3

We fabricated Pt epitaxial films on SrTiO3(111) by a dc-sputtering method. Surface structure, atomic-scale surface morphology and electrochemical properties are discussed. RHEED observation indicates that epitaxial films are obtained at substrate temperatures of 450, 500 and 550 °C. The RHEED patterns in the zero and first order Laue zone indicates high crystallinity and the atomically smooth surface of the films. Oscillation in the intensity of X-ray diffraction is also observed neighboring the Pt-111 peak, that shows uniform atomic stacking along the out-of-plane direction. Analysis using dynamic scattering theory reveals that there is a compressive in-plane lattice strain. Laue fringes disappears as the growth temperature is raised more than 600 °C.