[10a-W331-1~10] CS.4 Code-sharing Session of 3.15 & 3.16

▲ [10a-W331-10] Investigation of InP/Si bonding condition for suppressing degradation of Photoluminescence property using Surface Activated Bonding

〇(M2)Yuning Wang¹, Takuya Mitarai¹, Tomohiro Amemiya^1,2, Nobuhiko Nishiyama^1,2, Shigehisa Arai^1,2 (1.Tokyo Tech, 2.FIRST)

Keywords:Fast Atom Beam, Surface Activated Bonding, Photoluminescence

To deal with thermal stress and long cooling time introduced by conventional wafer bonding technology, such as hydrophilic bonding and plasma activated bonding (PAB), surface activated bonding (SAB) based on fas atom beam (FAB) was proposed in recent years, which can realize wafer bonding at room temperature. In our previous report, in order to suppress damage introduced by Ar-FAB irradiation to wafer, we reported the influence of irradiation to photoluminescence (PL) properties of GaInAs/InP wafers by various FAB sources and figured out that Xe-FAB has the lowest damage to PL intensity. In this report, we measured bonding strength of InP/Si bonding conducted by Xe-FAB and compared with the result under the same bonding condition conducted by Ar-FAB.