[10a-W331-1~10] CS.4 Code-sharing Session of 3.15 & 3.16

▼ [10a-W331-9] Investigation of stress dependence on bonding strength for III-V/Si chip-on-wafer by plasma activated bonding

〇Liu Bai¹, Takehiko Kikuchi^1,3, Takuya Mitarai¹, Nobuhiko Nishiyama^1,2, Hideki Yagi³, Tomohiro Amemiya^1,2, Shigehisa Arai^1,2 (1.Tokyo Tech, 2.IIR, 3.SEI)

Keywords:III-V/Si, chip-on-wafer, plasma activated bonding

A large-scale photonic integrated circuit based on Si-photonics has several advantages. III-V semiconductors with different bandgap and chip sizes should be also integrated with Si to obtain optical gain function by using the Chip-on-Wafer bonding technology. In our previous work, we reported the bonding weight dependence for Chip-on-Wafer plasma activated bonding. This time we report stress dependence on the bonding strength for Chip-on-Wafer by plasma activated bonding.