[10a-W541-1~12] 15.4 III-V-group nitride crystals

[10a-W541-3] Temperature dependence of Cp₂Mg using in-situ monitoring in MOVPE reactor

〇Yoko Sato¹, Daisuke Hayashi¹, Masakazu Minami¹, Noboru Muramatsu², Motoaki Iwaya² (1.HORIBA STEC, 2.Meijo Univ.)

Keywords:p-GaN, metal-organic vapor phase epitaxy, Cp2Mg

Mg concentration p-GaN is a significant parameter which determines the device performance. Therefore, the technology of in-situ monitoring of Cp₂Mg which is a precursor of Mg is strongly desired. In-situ monitoring has already been performed in supply line. However, it is more important to monitor Cp₂Mg in an MOVPE reactor to get further investigation. In this work, we directly configured a laser path in the MOVPE reactor using a quantum cascade laser and observed temperature dependence of Cp₂Mg vapor pressure by changing the suscepor temperature.