[10a-W541-1~12] 15.4 III-V-group nitride crystals

[10a-W541-9] Spatially resolved spectroscopy of potential barrier around V-pits in InGaN multiple quantum wells on moderate temperature GaN layers (2)

〇Satoshi Kurai¹, Kohei Okawa¹, Ryoga Makio¹, Junji Gao¹, Naoya Hayashi¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoichi Yamada¹ (1.Yamaguchi Univ.)

Keywords:InGaN, scanning near-field optical microscopy, potential barrier