[10a-W641-1~10] 6.3 Oxide electronics

[10a-W641-3] PDA condition dependency on analog behavior of HfO₂ charge trap memory

〇Taiho Yoshinaka¹, Shota Enomoto¹, Masahiro Hatamoto¹, Yasuo Nara¹ (1.Univ. of Hyogo)

Keywords:machine learning, analog memory, charge trap memory

To realize machine learning computer based on the neuron model, analog memory is necessary. In this study, we propose the charge trap memory using HfO₂ for the charge trap layer, and the PDA temperature dependence on the analog behavior of flat band voltage was investigated. As a result, it is found that the change of the flat band voltage greatly depends on the PDA temperature.