16:00 〜 18:00
▼ [10p-PA8-6] Effect of CO2 and O3 treatment on directly Synthesized Graphene on Insulating Substrates at low temperature using Microwave Plasma Enhanced Chemical Vapor Deposition
キーワード：Direct graphene growth, Low temperature, MPCVD
Researchers are still in search of a better ways to synthesize graphene at lower temperatures directly on desired substrates to give an end to search of an alternative to Indium Tin Oxide (ITO) over a period of 20 years [1,2]. In this work, an attempted has been made to grow large area (2 x 2 cm) graphene directly on insulating substrates such as quartz, glass and SiO2/Si using magnetron generated microwave plasma CVD at substrate temperature 300oC.
Key to this work is use of 0.3 sccm CO2 during growth to put a control over vertical graphene growth generally forming carbon walls and 15-20 mins of O3 treatment on as-synthesized graphene to improve sheet carrier mobility and transmittance (Fig.1). Optical microscope UV-Vis spectroscopy, Raman microscopy, X-ray Photoelectron spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic force microscopy (AFM) measurements confirmed the formation of 1.2nm thick continuous graphene layer on glass, quartz and SiO2/Si with sheet resistance 1300 Ohm/sq and transmittance 80%. Although the formed graphene sheet resistance is near a kilo Ohm/sq at the moment, the sheet resistance is reduced to 200 Ohm/sq by doing process. This transfer free low-temperature synthesis approach is believed to explore new dimensions of graphene synthesis and applications[3].
Key to this work is use of 0.3 sccm CO2 during growth to put a control over vertical graphene growth generally forming carbon walls and 15-20 mins of O3 treatment on as-synthesized graphene to improve sheet carrier mobility and transmittance (Fig.1). Optical microscope UV-Vis spectroscopy, Raman microscopy, X-ray Photoelectron spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic force microscopy (AFM) measurements confirmed the formation of 1.2nm thick continuous graphene layer on glass, quartz and SiO2/Si with sheet resistance 1300 Ohm/sq and transmittance 80%. Although the formed graphene sheet resistance is near a kilo Ohm/sq at the moment, the sheet resistance is reduced to 200 Ohm/sq by doing process. This transfer free low-temperature synthesis approach is believed to explore new dimensions of graphene synthesis and applications[3].