[10p-PB4-1~23] 3.13 Semiconductor optical devices

[10p-PB4-7] Current-injection lasing from a GaAs/AlGaAs coupled multilayer cavity fabricated by (113)B GaAs wafer bonding

〇Xiangmeng Lu¹, Kotaro Ogusu¹, Misa Takahashi¹, Tsuyoshi Goda¹, Naoto Kumagai², Ken Morita³, Yasuo Minami¹, Takahiro Kitada¹ (1.Tokushima Univ., 2.AIST, 3.Chiba Univ.)

Keywords:terahertz, coupled multilayer cavity, laser