[10p-S222-1~15] 12.4 Organic light-emitting devices and organic transistors

△ [10p-S222-4] Low-voltage and Stable Operation of Solution-Processed Organic Transistors Based on Ultrahydrophobic Carrier Transport Interface

〇(D)Gyo Kitahara¹, Takamasa Hamai¹, Satoshi Matsuoka¹, Shunto Arai¹, Tatsuo Hasegawa^1,2 (1.Univ. Tokyo, 2.AIST-FLEC)

Keywords:Organic Thin-film Transistors, Hydrophobic Polymer Gate Dielectric, Printed Silver Electrodes

In the solution-processed organic thin-film transistors, we found that hydrophobic gate dielectric layers enabled reduction of hysteresis and steep switching characteristics compared to hydrophilic dielectric interface. In the presentation, we will describe the stable operation of solution-processed transistors based on hydrophobic gate dielectric interface, and describe the low-voltage operation due to increased capacitance, and then discuss the advantage of hydrophobic carrier transport interface in the point of suppression of carrier trap.