[10p-W241-1~8] Pioneering of Frontier technology for metal oxide novel device I -from thin film fabrication to device creation -

[10p-W241-4] Factors limiting growth rates and carrier concentrations of Ga-doped ZnO films deposited by reactive plasma deposition with dc arc discharge

〇Tetsuya Yamamoto¹, Yutaka Furubayashi¹, Hisao Makino¹ (1.Kochi Univ. Tech.)

Keywords:Zinc oxide, carrier concentration, growth rates of films

We discuss factors limiting growth rates and carrier concentrations of Ga-doped ZnO films deposited by reactive plasma deposition with dc arc discharge on the basis of the analysis of the data obtained by optical emission spectroscopy (OES) and Hall effect measurements. The results are clarfiied as follows: the dependence of growth rates on the oxygen gas flow rates (OFR) is OFR dependence of a ratio of the emission intensity of O ions to the sum of the emission intensities of O and Zn ions, whereas OFR dependence of carrier concentrations is governed by OFR dependence of a ratio of the emission intensity of Zn atoms to the sum of the emission intensities of O and Zn atoms.