The 66th JSAP Spring Meeting, 2019

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Symposium (Oral)

Symposium » Pioneering of Frontier technology for metal oxide novel device I -from thin film fabrication to device creation -

[10p-W241-1~8] Pioneering of Frontier technology for metal oxide novel device I -from thin film fabrication to device creation -

Sun. Mar 10, 2019 1:30 PM - 5:15 PM W241 (W241)

Kosaku Shimizu(Nihon Univ.), Mutsumi Kimura(Ryukoku Univ.)

5:00 PM - 5:15 PM

[10p-W241-8] PdCoO2/β-Ga2O3 epitaxial Schottky junctions

〇Takayuki Harada1, Shun Ito1, Atsushi Tsukazaki1 (1.IMR Tohoku Univ.)

Keywords:Ga2O3, power device, transparent conductor