Simulation of a GaN MOVPE Process in a Vertical Crystal Growth Apparatus

Takumi Tomizawa; Kento Kawakami; Teruo Sakurai; Akira Kusaba; Naoya Okamoto; Katsunori Yoshimatsu; Yoshiaki Daigo; Ichiro Mizushima; Takashi Yoda; Yoshihiro Kangawa; Koichi Kakimoto; Kenji Shiraishi

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[10p-W541-1~20] 15.4 III-V-group nitride crystals

Sun. Mar 10, 2019 1:30 PM - 7:00 PM W541 (W541)

Motoaki Iwaya(Meijo Univ.), Yoshio Honda(Nagoya Univ.), Shugo Nitta(Nagoya Univ.)

6:15 PM - 6:30 PM

[10p-W541-18] Simulation of a GaN MOVPE Process in a Vertical Crystal Growth Apparatus

〇Takumi Tomizawa¹, Kento Kawakami², Teruo Sakurai², Akira Kusaba³, Naoya Okamoto², Katsunori Yoshimatsu⁴, Yoshiaki Daigo⁵, Ichiro Mizushima^5,6, Takashi Yoda^5,6, Yoshihiro Kangawa³, Koichi Kakimoto³, Kenji Shiraishi⁴ (1.Depertment of Eng., Nagoya Univ., 2.Grad. Sch. of Eng., Nagoya Univ., 3.RIAM, Kyushu Univ., 4.IMaSS, Nagoya Univ., 5.NuFlare Technology, Inc., 6.FIRST, Tokyo Institute of Technology)

Keywords:GaN, crystal growth