High current injection for UV light emitting devices with graded p-AlGaN

Kosuke Sato; Shinji Yasue; Yuya Ogino; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[10p-W541-1~20] 15.4 III-V-group nitride crystals

Sun. Mar 10, 2019 1:30 PM - 7:00 PM W541 (W541)

Motoaki Iwaya(Meijo Univ.), Yoshio Honda(Nagoya Univ.), Shugo Nitta(Nagoya Univ.)

2:00 PM - 2:15 PM

[10p-W541-3] High current injection for UV light emitting devices with graded p-AlGaN

〇(D)Kosuke Sato^1,2, Shinji Yasue², Yuya Ogino², Motoaki Iwaya², Tetsuya Takeuchi², Satoshi Kamiyama², Isamu Akasaki^2,3 (1.Asahi-Kasei, 2.Meijo Univ., 3.Nagoya Univ.)

Keywords:nitride, uv, laser

We report the results of current injection up to 20 kA/cm² in UVB light emitting device. The device was designed to have enough light confinment and hole injection by using graded p-AlGaN with average Al% at 55%. We also report the result of the emission from mirror facet.