The 66th JSAP Spring Meeting, 2019

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[11a-70A-1~10] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 11, 2019 9:00 AM - 11:45 AM 70A (70th Anniversary Auditorium)

Tetsuo Hatakeyama(Toyama Pref. Univ.)

9:00 AM - 9:15 AM

△ [11a-70A-1] Forward Thermionic Field Emission Transport and Characterization of Barrier Height in Heavily-Doped 4H-SiC Schottky Barrier Diodes

〇Masahiro Hara1, Satoshi Asada2, Takuya Maeda2, Tsunenobu Kimoto2 (1.Faculty of Eng., Kyoto Univ., 2.Kyoto Univ.)

Keywords:SiC, Schottky Barrier Diode, Thermionic Field Emission