The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

Code-sharing session » 【CS.9】Code-sharing Session of 10.1, 10.2, 10.3 & 10.4

[11a-M101-1~11] CS.9 Code-sharing Session of 10.1, 10.2, 10.3 & 10.4

Mon. Mar 11, 2019 9:00 AM - 12:00 PM M101 (H101)

Takeshi Seki(Tohoku Univ.), Shinji Miwa(Univ. of. Tokyo)

9:00 AM - 9:15 AM

[11a-M101-1] Resistive detection of the Néel temperature of Cr2O3 thin films

〇(M2)Tatsuya Iino1, Takahiro Moriyama1, Hiroyuki Iwaki1, Hikaru Aono2, Yu Shiratsuchi2, Teruo Ono1 (1.ICR, Kyoto Univ., 2.Osaka Univ.)

Keywords:spin Hall magnetoresistance, antiferromagnet, magnetic phase transition

Although bulk magnetic properties of various antiferromagnets have been vigorously studied since long ago, their properties in the form of thin films, which are more relevant to antiferromagnetic spintronic devices, have not been investigated as much. In this work, we characterized the Néel temperature of Cr2O3 thin films by investigating the temperature dependence of the spin Hall magnetoresistance (SMR) in Cr2O3/Pt bilayers.
We prepared Cr2O3/Pt bilayers epitaxially grown on a single crystal α-Al2O3substrate. We performed the resistance ratio measurements,between parallel and perpendicular to the magnetic field to sensitively detect the resistance change up on the magnetic phase transition. We employed Cr2O3 films with the magnetic easy axis parallel to the magnetic field. The drastic change in temperature dependence of (V1/V2)-1 around 300 K is associated with the resistance change due to SMR up on the magnetic phase transition and it corroborates the Néel temperature of Cr2O3 (cf. 307 K is reported for the bulk.). The results provide a reliable way to determine the Néel temperature of antiferromagnetic thin films.