[11a-M113-1~11] 6.2 Carbon-based thin films

[11a-M113-1] [Young Scientist Presentation Award Speech] Reduction of dislocation density in diamond and improvement of the SBD properties by hot-filament CVD growth accompanied with metal incorporation

〇Shinya Ohmagari¹, Hideaki Yamada¹, Nobuteru Tsubouchi¹, Shingo Tanaka², Akiyoshi Chayahara¹, Hitoshi Umezawa¹, Yoshiaki Mokuno¹, Daisuke Takeuchi¹ (1.AIST ADPERC, 2.AIST RIECEN)

Keywords:Diamond, Dislocation, Schottky

Dislocations in semiconductor crystals are desirebly minimized as much as possible, since their presence typically deteriorates device performance. While diamond electronics have demonstrated superior device properties, they have not fulfilled their material limit yet. To further improve device performance, a low dislocation density and a high-quality epitaxial layer are required. We have grown diamond films by hot-filament chemical vapor deposition accompanying W incorporations from heated metal-wires. Despite heavily W incorporation of 10¹⁸ cm^-3, the films exhibited better crystalline quality than seed substrates: a large reduction of threading dislocation was demonstrated. The dislocation propagation was partially annihilated by W impurities. In this study, Schottky barrier diodes were fabricated on heteroepitaxial diamond. The SBD performance after insertion of HFCVD intermediate layer will be discussed.