9:15 AM - 9:30 AM
[11a-M121-2] Pulsed-laser Activation of Implanted Mg Acceptors in GaN Grown on GaN Substrates
Keywords:GaN-based semiconductors, Ion implantation, Laser annealing
Pulsed-laser annealing with a protected layer of SiNx or AlN was performed for activating Mg acceptors implanted in MOCVD-grown GaN on a GaN substrate. In the cathodo-luminescence spectra, donor-acceptor pair emission with the phonon replicas was clearly observed. We, therefore, concluded that Mg acceptors can be activated by the pulesed laser annealing.