Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[11a-M121-1~12] 13.7 Compound and power electron devices and process technology

Mon. Mar 11, 2019 9:00 AM - 12:15 PM M121 (H121)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[11a-M121-1] Mg recoil implantation into GaN with Nitrogen ions (3)

〇Toshikazu Yamada¹, Hisashi Yamada¹, Hiroshi Chonan¹, Noriyuki Taoka¹, Tokio Takahashi¹, Mituaki Shimizu^1,2 (1.AIST, 2.Nagoya Univ.)

9:15 AM - 9:30 AM

[11a-M121-2] Pulsed-laser Activation of Implanted Mg Acceptors in GaN Grown on GaN Substrates

〇Takao Miyajima¹, Yusuke Yamada¹, Takato Ichikawa¹, Daichi Imai¹, Toshiyuki Sameshima² (1.Meijo Univ., 2.Tokyo Univ. of Agric. & Tech.)

9:30 AM - 9:45 AM

[11a-M121-3] Post Atmospheric Pressure Thermal-Plasma-Jet Irradiation annealing of Magnesium implanted in Ga-face GaN layer

〇Hiroaki Hanafusa¹, Seiichiro Higashi¹, Koji Shiozaki² (1.HIroshima Univ., 2.Nagoya Univ.)

9:45 AM - 10:00 AM

[11a-M121-4] Photoluminescence studies on various Mg ion-implanted GaN

〇Shigefusa Chichibu^1,2,3, Kohei Shima¹, Hiroko Iguchi⁴, Tetsuo Narita⁴, Keita Kataoka⁴, Kazunobu Kojima¹, Akira Uedono⁵ (1.Tohoku Univ., 2.Nagoya Univ., 3.Hokkaido Univ., 4.Toyota Central RDL, 5.Univ. of Tsukuba)

10:00 AM - 10:15 AM

[11a-M121-5] Deep levels introduced by 2-MeV electron beam irradiation in homoepitaxial n-type GaN

〇Masahiro Horita^1,2, Tetsuo Narita³, Tetsu Kachi², Tsutomu Uesugi³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Toyota Central R&D Labs., Inc.)

10:15 AM - 10:30 AM

[11a-M121-6] Low temperature behavior of deep level traps introduced by electron beam irradiation in homoepitaxial n-type GaN

〇Meguru Endo¹, Masahiro Horita^2,3, Jun Suda^2,3 (1.Nagoya Univ., 2.Nagoya Univ. Graduate School, 3.IMaSS Nagoya Univ.)

10:45 AM - 11:00 AM

[11a-M121-7] Resolution of H1 spectra in MOVPE n-GaN by optical DLTS

〇(M1)Syun Ito¹, Yutaka Tokuda¹ (1.Aichi Inst. of Technol)

11:00 AM - 11:15 AM

[11a-M121-8] Characterization of hole traps in hydrogen-implanted n-GaN

〇(M1)Kazuya Tamura¹, Ken Iyoda¹, Yutaka Tokuda¹, Kenji Shiojima², Jyoji Ito³, Takahide Yagi³ (1.Aichi Inst. of Technol., 2.Fukui Univ., 3.S.H. I-ATEX Co, Ltd)

11:15 AM - 11:30 AM

[11a-M121-9] Deep level traps in GaN by high-temperature thermal treatment with SiN cap

〇Satomu Furuta¹, Masahiro Horita^2,3, Nariaki Tanaka⁴, Tohru Oka⁴, Jun Suda^2,3 (1.Nagoya Univ., 2.Nagoya Univ. Graduate school, 3.IMASS Nagoya Univ., 4.Toyota Gosei)

11:30 AM - 11:45 AM

[11a-M121-10] Band-diagram estimation on InGaAs/a-Ge/InGaAs material systems fabricated by atomic-diffusion bonding

〇yuki yamada¹, Miyuki Uomoto², Takehito Shimatsu², Masahiro Nada³, Fumito Nakajima¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs., 2.Tohoku Univ., 3.NTT Device Innovation Center)

11:45 AM - 12:00 PM

[11a-M121-11] Evaluation of fabrication method of InGaAs Nanosheet used by HSQ

〇(M1)Minoru Kitamura¹, Toru Kanazawa¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech.)

12:00 PM - 12:15 PM

[11a-M121-12] Elemental distribution analysis around GaAs/GaAs homointerfaces fabricated by surface-activated bonding method

〇Yasuo Shimizu¹, Naoki Ebisawa¹, Yutaka Ohno¹, Jianbo Liang², Naoteru Shigekawa², Koji Inoue¹, Yasuyoshi Nagai¹ (1.IMR Tohoku Univ., 2.Osaka City Univ.)

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