The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[11a-M121-1~12] 13.7 Compound and power electron devices and process technology

Mon. Mar 11, 2019 9:00 AM - 12:15 PM M121 (H121)

Masashi Kato(NITech)

11:00 AM - 11:15 AM

[11a-M121-8] Characterization of hole traps in hydrogen-implanted n-GaN

〇(M1)Kazuya Tamura1, Ken Iyoda1, Yutaka Tokuda1, Kenji Shiojima2, Jyoji Ito3, Takahide Yagi3 (1.Aichi Inst. of Technol., 2.Fukui Univ., 3.S.H. I-ATEX Co, Ltd)

Keywords:MCTS, Ion implantation

We have characterized hole traps in hydrogen-implanted MOCVD n-GaN by isothermal MCTS which is applicable for Schottky diodes. Carbon-related H1 trap (Ev+0.86 eV) is present in non-implanted samples. In addition, trap labeled H0 is observed in hydrogen-implanted samples with longer hole emission time constants than H1trap. H0 trap is also observed in He-implanted samples, indicating that H0 is not hydrogen-related. We are now investigating the energy levels of H0 which are found to depend on the reverse biases using MCTS measurements.