[11a-PB2-1~10] 13.3 Insulator technology

[11a-PB2-7] Measurement of Electronic Structure on O/Cs/SiC (3×3) surface by Metastable atom Induced Electron Spectroscopy

〇(B)Masaki Tanaka¹, Ryo Iida¹, Takumi Kashiwaya¹, Takuto Watanabe¹, Kaede Hirayama², Satoru Tanaka², Masamichi Naitoh³, Tomonori Ikari¹ (1.NIT, Ube College, 2.Kyushu Univ., 3.Kyushu Inst. of Tech.)

Keywords:Silicon Carbide, Metastable atom Induced Electron Spectroscopy