〇(B)Masaki Tanaka¹, Ryo Iida¹, Takumi Kashiwaya¹, Takuto Watanabe¹, Kaede Hirayama², Satoru Tanaka², Masamichi Naitoh³, Tomonori Ikari¹ (1.NIT, Ube College, 2.Kyushu Univ., 3.Kyushu Inst. of Tech.)

9:30 AM - 11:30 AM

△ [11a-PB2-8] Evaluation of depth decomposition film quality of SiO₂ insulating film on Si substrate using angle resolved XPS

〇(M1)Sai Hasegawa¹, Sakura Takeda¹, Yuya Yoshie¹, mutsunori Uenuma¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹, Hiroshi Daimon¹ (1.NAIST)

9:30 AM - 11:30 AM

[11a-PB2-9] The evolution of antiferroelectric property of HfO₂-ZrO₂ thin film

〇Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2, Shigeaki Zaima³ (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.IIFS, Nagoya Univ.)

9:30 AM - 11:30 AM

[11a-PB2-10] The physical origin of the suppression of hole leakage by Hf incorporation in AlON

〇(M2)Takuya Nagura¹, Kenta Chokawa¹, Masaaki Araidai^1,2, Takuji Hosoi³, Heiji Watanabe³, Atsushi Oshiyama², Kenji Shiraishi^1,2 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Graduate School of Engineering, Osaka Univ.)

Oral presentation

[11p-M136-1~14] 13.3 Insulator technology

Mon. Mar 11, 2019 1:15 PM - 5:15 PM M136 (H136)

Takanobu Watanabe(Waseda Univ.), Koji Kita(Univ. of Tokyo), Kiyoteru Kobayashi(Tokai Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:15 PM - 1:30 PM

[11p-M136-1] Consideration on Temperature Dependence of De-trapping of Localized Carriers

〇Michiru Hogyoku¹, Takashi Izumida¹, Hiroyoshi Tanimoto¹, Nobutoshi Aoki¹, Seiji Onoue¹ (1.Toshiba Memory Corp.)

1:30 PM - 1:45 PM

▲ [11p-M136-2] High quality silicon dioxide by low temperature neutral beam enhanced atomic layer deposition

〇HuaHsuan Chen¹, Daisuke Ohori¹, Takuya Ozaki¹, Mitsuya Utsuno², Tomohiro Kubota², Toshihisa Nozawa², Seiji Samukawa^1,3 (1.IFS, Tohoku Univ., 2.ASM Japan K.K., 3.AIMR, Tohoku Univ.)

1:45 PM - 2:00 PM

[11p-M136-3] Charge trapping characteristics in SiO₂ during application of electric stress at high temperature

〇(M2)Takeshi Nanke¹, Ryu Hasunuma¹ (1.Univ. of Tuskuba)

2:00 PM - 2:15 PM

[11p-M136-4] Theoretical study on Si missing in Si pillar oxidation II

〇Hiroyuki Kageshima^1,4, Kenji Shiraishi^2,4, Tetsuo Endoh^3,4 (1.Shimane Univ., 2.Nagoya Univ., 3.Tohoku Univ., 4.JST ACCEL)

2:15 PM - 2:30 PM

[11p-M136-5] Atom-Probe Observation of Oxidation-Enhanced Self-Diffusion in Isotopically Modulated Silicon Nanopillars

〇Ryotaro Kiga¹, Sayaka Hayashi¹, Satoru Miyamoto¹, Yasuo Shimizu², Yasuyoshi Nagai², Tetsuo Endoh^3,4, Kohei Itoh¹ (1.Keio Univ., 2.IMR Tohoku Univ., 3.CIES Tohoku Univ., 4.JST-ACCEL)

2:45 PM - 3:00 PM

[11p-M136-6] Neural network potential for Si/SiO₂ interface

〇Makoto Mataka¹, Takuya Nagura¹, Masaaki Araidai^1,2, Kenji Shiraishi^1,2 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ.)

3:00 PM - 3:15 PM

△ [11p-M136-7] Flash Lamp Annealing temperature dependency on interface trap density of high-k gate stack

〇Kodai Shuto¹, Taiho Yoshinaka¹, Kodai Fujiwara¹, Hikaru Kawarazaki², Takayuki Aoyama², Shinichi Kato², Yasuo Nara¹ (1.Univ. of Hyogo, 2.SCREEN Semiconductor Solutions Co)

3:15 PM - 3:30 PM

▼ [11p-M136-8] Impact of metal gate electrodes on electrical properties of Y₂O₃/Si_0.78Ge_0.22 gate stacks

〇(D)TsungEn Lee¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

3:30 PM - 3:45 PM

△ [11p-M136-9] Contribution of temperature dependence of interface dipole layer to variation of charge stored on capacitors induced by temperature change

〇Takashi Hamaguchi¹, Koji Kita¹ (1.The Univ. of Tokyo)

4:00 PM - 4:15 PM

[11p-M136-10] Survey of GeO desorption at GeO₂/ Ge interface

〇Ryuichirou Watanabe¹, Kenichiro Toyoda¹, Syotaro Wachi¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo Univ. of agri. & Tech.)

4:15 PM - 4:30 PM

▲ [11p-M136-11] Crystallization of GeO₂ on Ge is really triggered by GeO desorption?

〇Min Xie¹, Tomonori Nishimura¹, Takeaki Yajima¹, Akira Toriumi¹ (1.Univ. Tokyo)

4:30 PM - 4:45 PM

[11p-M136-12] Oxidation mechanism and film properties of GeO₂ oxidized in high-pressure O₂

Xu Wang¹, Tomonori Nishimura¹, 〇Akira Toriumi¹ (1.The Univ. of Tokyo)

4:45 PM - 5:00 PM

[11p-M136-13] Fabrication and Evaluation of GeO₂/Ge structure by CVD method

〇Yasuyuki Katsuno¹, Amu Sato¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo Univ. of agri. & Tech.)

5:00 PM - 5:15 PM

[11p-M136-14] Fabrication of HfO₂/Ge direct junction structure using Kr/O₂ plasma oxidation method

〇Takeshi Tokorozuki¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

Sessions

13 Semiconductors » 13.3 Insulator technology

[11a-PB2-1~10] 13.3 Insulator technology

[11a-PB2-1] Cause of generating the penetration barrier of H₂O molecule into SiO₂ and Si₃N₄ films

[11a-PB2-2] Study of V_o diffusion barrier in SiO₂ with lattice constant modulation

[11a-PB2-3] Study of pressure and temperature effects on dynamical properties for SiO₂ with oxygen vacancy

[11a-PB2-4] Dependence of Residual OH Reduction in a Deposited Si Oxide Film on Low-Temperature Annealing Condition with NH₃ gas

[11a-PB2-5] Defect level of nitrogen atom vacancy in hafnium-doped silicon nitride film

[11a-PB2-6] Determination of Density of Holes Trapped in MONOS Memories Using the Analysis of the Tunneling Current

[11a-PB2-7] Measurement of Electronic Structure on O/Cs/SiC (3×3) surface by Metastable atom Induced Electron Spectroscopy

△ [11a-PB2-8] Evaluation of depth decomposition film quality of SiO₂ insulating film on Si substrate using angle resolved XPS

[11a-PB2-9] The evolution of antiferroelectric property of HfO₂-ZrO₂ thin film

[11a-PB2-10] The physical origin of the suppression of hole leakage by Hf incorporation in AlON

[11p-M136-1~14] 13.3 Insulator technology

[11p-M136-1] Consideration on Temperature Dependence of De-trapping of Localized Carriers

▲ [11p-M136-2] High quality silicon dioxide by low temperature neutral beam enhanced atomic layer deposition

[11p-M136-3] Charge trapping characteristics in SiO₂ during application of electric stress at high temperature

[11p-M136-4] Theoretical study on Si missing in Si pillar oxidation II

[11p-M136-5] Atom-Probe Observation of Oxidation-Enhanced Self-Diffusion in Isotopically Modulated Silicon Nanopillars

[11p-M136-6] Neural network potential for Si/SiO₂ interface

△ [11p-M136-7] Flash Lamp Annealing temperature dependency on interface trap density of high-k gate stack

▼ [11p-M136-8] Impact of metal gate electrodes on electrical properties of Y₂O₃/Si_0.78Ge_0.22 gate stacks

△ [11p-M136-9] Contribution of temperature dependence of interface dipole layer to variation of charge stored on capacitors induced by temperature change

[11p-M136-10] Survey of GeO desorption at GeO₂/ Ge interface

▲ [11p-M136-11] Crystallization of GeO₂ on Ge is really triggered by GeO desorption?

[11p-M136-12] Oxidation mechanism and film properties of GeO₂ oxidized in high-pressure O₂

[11p-M136-13] Fabrication and Evaluation of GeO₂/Ge structure by CVD method

[11p-M136-14] Fabrication of HfO₂/Ge direct junction structure using Kr/O₂ plasma oxidation method

Authentication

Sessions

13 Semiconductors » 13.3 Insulator technology

[11a-PB2-1~10] 13.3 Insulator technology

△ [11a-PB2-8] Evaluation of depth decomposition film quality of SiO2 insulating film on Si substrate using angle resolved XPS

[11p-M136-1~14] 13.3 Insulator technology

▲ [11p-M136-2] High quality silicon dioxide by low temperature neutral beam enhanced atomic layer deposition

△ [11p-M136-7] Flash Lamp Annealing temperature dependency on interface trap density of high-k gate stack

▼ [11p-M136-8] Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks

△ [11p-M136-9] Contribution of temperature dependence of interface dipole layer to variation of charge stored on capacitors induced by temperature change

▲ [11p-M136-11] Crystallization of GeO2 on Ge is really triggered by GeO desorption?

Authentication

△ [11a-PB2-8] Evaluation of depth decomposition film quality of SiO₂ insulating film on Si substrate using angle resolved XPS

▼ [11p-M136-8] Impact of metal gate electrodes on electrical properties of Y₂O₃/Si_0.78Ge_0.22 gate stacks

▲ [11p-M136-11] Crystallization of GeO₂ on Ge is really triggered by GeO desorption?