[11p-M136-1~14] 13.3 Insulator technology

△ [11p-M136-7] Flash Lamp Annealing temperature dependency on interface trap density of high-k gate stack

〇Kodai Shuto¹, Taiho Yoshinaka¹, Kodai Fujiwara¹, Hikaru Kawarazaki², Takayuki Aoyama², Shinichi Kato², Yasuo Nara¹ (1.Univ. of Hyogo, 2.SCREEN Semiconductor Solutions Co)

Keywords:flash lamp anneal, interface trap density, high-k gate stack

In order to improve the quality of the high-k film, PDA (Post-deposition Annealing) after high-k film formation is necessary. PDA using FLA (Flash Lamp Annealing) is proposed, in which heat treatment is carried out in milliseconds. FLA has flash heating and assist heating. Both of them are important parameters to the characteristics of the high-k film. We measured the interface state density D_it of the sample treated various temperatures of flash heating and assist heating, and evaluated the effect of flash heating and assist heating on D_it.