[11a-PB2-1~10] 13.3 Insulator technology

[11a-PB2-4] Dependence of Residual OH Reduction in a Deposited Si Oxide Film on Low-Temperature Annealing Condition with NH₃ gas

〇Susumu Horita¹ (1.JAIST)

Keywords:Si oxide film, low temperature, reduction of OH

It is desired that deposited Si oxide films are formed at lower temperature. But, their dielectric property is gotten worse because large amounts of residual OH exist in them. For this problem, we found before that using NH₃ as an annealing gas led to very effective reduction of OH even at 175^oC, compared with N₂ gas. This time, investigating annealing temperature dependence of reduction amount of OH in low-temperature Si oxide films, it was found that 60% OH amount was reduced from the as-deposited Si oxide film even at about 100 ^oC for 5 min, which was more than twice that of N₂ gas annealing.