[11a-PB2-1~10] 13.3 Insulator technology

[11a-PB2-2] Study of V_o diffusion barrier in SiO₂ with lattice constant modulation

〇(M1)Kohei Yata¹, Hiroyuki Kageshima¹ (1.Shimane Univ.)

Keywords:SiO2, Oxygen vacancy, First-principles calculation