The 66th JSAP Spring Meeting, 2019

Presentation information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

[11a-PB2-1~10] 13.3 Insulator technology

Mon. Mar 11, 2019 9:30 AM - 11:30 AM PB2 (PB)

9:30 AM - 11:30 AM

[11a-PB2-10] The physical origin of the suppression of hole leakage by Hf incorporation in AlON

〇(M2)Takuya Nagura1, Kenta Chokawa1, Masaaki Araidai1,2, Takuji Hosoi3, Heiji Watanabe3, Atsushi Oshiyama2, Kenji Shiraishi1,2 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Graduate School of Engineering, Osaka Univ.)

Keywords:First principles calculation, AlON