[11a-PB4-1~18] 15.4 III-V-group nitride crystals

[11a-PB4-1] GaN growth on substrates with AlN structures

〇Masayuki Nakamura¹, Takayuki Kobayashi¹, Koichirou Yuki², Ryo Inomoto², Narihito Okada², Toshiaki Tatsuta¹, Kazuyuki Tadatomo², Shin-ichi Motoyama¹ (1.Samco Inc., 2.Yamaguchi Univ.)

Keywords:Gallium Nitride, atomic layer deposition, metal organic vaper phase epitaxy

A low-defect GaN layer is indispensable for the fabrication of high-quality GaN power devices.To realize a low-defect GaN layer, it is important to reduce the lattice mismatch and the stress due to the difference of thermal expansion. In this study, we tried to reduce them by fabricating the AlN hollow structures on the sapphire substrates using ALD and growing GaN on them using MOVPE.
We estimated the quality of GaN layer using XRD. The FWHM of GaN 0002 and 10-12 are 255.1 arcsec and 235.0 arcsec, respectively. The FWHM of GaN 10-12 is small. This indicates that the AlN hollow structures reduce the lattice mismatch and the stress and realize high-quality GaN layer.