[11a-PB4-1~18] 15.4 III-V-group nitride crystals

[11a-PB4-2] I-V Property of Simple P-N Junction GaN Fabricated on Graphite Substrate

〇Takashi Inoue¹, Go Sajiki², Toshihiro Hosokawa¹, Akiyoshi Takeda¹, Hiroshi Okano² (1.Toyo Tanso Co., Ltd., 2.NIT, Kagawa College)

Keywords:GaN, Graphite, P-N Junction

We are developing GaN growth technique to fabricate light-emitting device on graphite substrate such as isotropic graphite and graphite sheet PERMA-FOIL^®. In the present study, we measured I-V property of simple P-N junction GaN device, and obtained diode property. However, the property was not comparable to the device on sapphire.