[11a-PB4-1~18] 15.4 III-V-group nitride crystals

[11a-PB4-3] Study of surface contamination on single-crystalline GaN layer (Ⅱ)

〇Ai Mizuno¹, Masaki Iwamoto¹, Takuya Osada¹, Reo Suzuki¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.School of Engineering, Tokyo Denki Univ.)

Keywords:GaN layer, XPS, surface contamination

In our report, we have demonstrated the air exposed GaN surface is contaminated by Si-based compounds. In this work, we confirmed to remove Si-based compounds from the surface by chemical etching. Also, we examined the contamination rate using X-ray photoelectron spectroscopy (XPS).