[11a-S011-1~9] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

[11a-S011-2] PAMBEによるm面サファイア基板上α-Ga₂O₃の成長

〇(DC)神野 莉衣奈¹、Cho Yongjin¹、Lee Kevin¹、Protasenko Vladimir¹、Xing Huili¹、Jena Debdeep¹ (1.コーネル大工)

キーワード：ultra-wide bandgap semiconductor、Gallium oxide、Molecular beam epitaxy

α-Ga₂O3 has attracted much interest in recent years because its alloys with In₂O₃ and Al₂O₃ enable bandgap engineering from 3.7 to 8.7 eV. MBE is a most promising method for the growth of heterostructures, but the film thickness of isomorphic α-Ga₂O₃ grown by MBE is limited by the formation of the thermodynamically most stable phase β-Ga₂O₃. In this study, we demonstrate the stabilized growth of the α-Ga₂O₃ phase on m-plane sapphire substrates up to a film thickness of ca. 200 nm.