[11a-S011-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[11a-S011-8] Crystallization of GaON thin films

〇Housei Akazawa¹ (1.NTT Device Innovation Center)

Keywords:GaON, crystalline phase, bandgap

While crystal structures and fundamental properties of Ga₂O₃ and GaN have been extensively investigated and established, their compound, i.e., GaON has been poorly characterized. We carried out sputter deposition of GaON thin films by varying the flow rate of O₂ and N₂ gases. We identified crystal structures depending on the O₂/N₂ flow rate ratios. We argue stability of phases from the crystallization temperatures.